3D NAND Device Engineer (SK)
Come join our NAND DESIGN, TECHNOLOGY, and MANUFACTURING team as a 3D NAND Device Engineer and work on the most advanced 3D NAND and SSD technology in the world.
As the global leader in the semiconductor industry, Intel possesses industry-leading SSD technology and the most capable Triple Level Cell, TLC, Quadruple Level Cell, QLC, and NAND Flash products. We have exciting opportunities in the Technology Development group for qualified Device Engineers looking to be part of the team responsible for delivering Moore's Law of Scaling for NAND Flash memory.
You will be part of the team responsible for overcoming NAND cell scaling challenges using semiconductor devices, technology, circuit, and algorithm approaches.
What you'll be doing:
Hands-on characterization, silicon experimentation, and modeling of the observed NAND memory device/array characteristics and engineering solutions to achieve the highest level of NAND memory component performance, quality, and reliability.
Collaborate with process integration engineers, circuit designers, product engineers, system engineers, and reliability engineers to understand the critical issues and inter-dependencies and engineer solutions to address them.
Create leading-edge NAND Flash technology with process development and process integration engineers.
Design and implement circuit schemes and algorithms used for reading and writing the NAND Flash memory with circuit designers.
Work with SSD systems engineers to establish system policies for the proper usage of NAND components as the storage media in SSDs.
An ideal candidate will exhibit the following:
Good problem-solving skills.
Demonstrate good analytical capabilities, sound technical foundations, and creativity.
Good team player and interpersonal skills.
Good communication skills.
The position is associated with the sale of the NAND business to SK Hynix aligning to Phase 2 of the transaction. Employees aligned to Phase 2 will continue to be employed by Intel developing NAND technology and components. Phase 2 of the transaction is expected to close in March 2025 at which time employees aligned to this phase of the transaction will transition employment to Solidigm, a stand-alone US subsidiary of SK Hynix headquartered in San Jose, California with offices world-wide. Solidigm is a leading global supplier of NAND flash memory solutions, led by Robert (Rob) B. Crooke as CEO, previously senior vice president and general manager of Intel’s Non-Volatile Memory Solutions Group. To read more, see: https://www.intc.com/news-events/press-releases/detail/1513/intel-sells-ssd-business-and-dalian-facility-to-sk-hynix
You must possess the below minimum qualifications to be initially considered for this position. Preferred qualifications are in addition to the minimum requirements and are considered a plus factor in identifying top candidates. Experience listed below would be obtained through a combination of your school work/classes/research and/or relevant previous job and/or internship experiences.
M.S. degree in Electrical Engineering, Applied Physics, or a related field of Study.
3 + years of experience in the following:
Semiconductor device physics, semiconductor technology, and semiconductor device characterization techniques.
Ph.D. degree in Electrical Engineering, Applied Physics, or a related field of Study.
1 + years of experience in the minimum qualifications:
NAND Flash cell and array and NAND technology.
Manufacturing yield, design and analysis of experiments, statistical data analysis techniques, and device modeling.
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