Memory Design Engineer
As a Memory Design Engineer, you will be part of Intel Design Enablement (DE) focused on pathfinding and development of advanced memory technology and circuits to enable best-in-class memory collateral/IP and product design across all generations of Intel process technology.
As a member of this team, your responsibilities include (but not limited to):
Memory pathfinding activities and power performance area (PPA) optimization through design technology co-optimization (DTCO); product/design enablement
Memory bitcell and complex periphery IC layout and automation
Memory array/IP design, memory circuit innovation, testchip design/execution/validation
Pre/post-Si validation/debug to enable yield and parametric tracking/ramp
The candidate must possess minimum qualifications to be initially considered for this position. Preferred qualifications are in addition to the minimum requirements and are considered a plus factor in identifying top candidates. Experience listed below would be obtained through a combination of your schoolwork class research and or relevant previous job and or internship experiences.
You should have Bachelor/Master in Electrical Engineering, Computer Engineering, Computer Science, or other related Electrical Scientific STEM field.
Proficient in TCL, Perl or Python programming language.
Unix/Linux operating system
Ability to work in a fast-paced, collaborative, and often intense project schedule.
Excellent communication and interpersonal skills, a good team-player as well as able to work independently.
Creative mind and self-motivated.
Analytical problem solving and multitasking.
Able to do pathfinding or research independently to find solutions.