This position is for a Device Engineer working on 3D NAND Cell/Array engineering. The engineer is responsible for leading research and development of next generation 3D technology to support Intel’s growing business in storage and memory. Primary responsibilities include silicon experimentation, cell and array characterization, data analysis, modelling of the device, array, circuits and system behavior to meet complete product requirements and system needs. The engineer is also responsible for developing innovative device solutions and memory operation algorithms to continue technology scaling. Successful candidate will collaborate with process integration engineers, circuit designers, product engineers, system engineers, and reliability engineers to understand the critical issues and inter-dependencies and engineer solutions to address them.
Candidate should possess an MS degree with at least 4 years additional experience, or a PhD with at least 2 years additional experience, in Electrical Engineering or Physics, with an emphasis in Physics of Semiconductor Materials or Devices
- 4+ years' experience in the area of Semiconductor and Device Physics, or device processing, electrical characterization, and device and circuit models.
- 4+ years' experience in technical problem solving.
Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.