Microelectronic Quality Reliability Engineers provide project management, product, process design/development and sustaining support for integrated circuit or semiconductor assemblies, various other electronic components, sub systems and/or completed units.
Responsible for physical understanding, model prediction and enhancement of quality & reliability for advanced products, transistor, interconnect, assembly/package and testing process.
Defines Si/assembly/package qualification requirement and responsible for product qualification or technology certification. Defines/develops and conducts stress tests, DFX requirements and research on individual technology components as well as integrated circuit/products. Develop cost effective production monitoring and screening schemes to ensure process is stable and products meet committed quality & reliability performance.In this position, you will be working as a member of the Non-Volatile Memory NVM Solutions Group's NSG's Technology Development Quality and Reliability team, helping to develop Intel's new emerging NVM technologies such as 3D NAND and 3D XPointTM and SSD products, focusing on NVM array reliability: degradation of key parameters due to write and read endurance cycling and various data retention and disturb mechanisms.
Your responsibilities will include but not limited to:
Determining reliability requirements and technology targets of components and systems to achieve company, customer and other reliability objectives.
Designing and executing experiments to identify, segment, characterize and model NVM array reliability mechanisms.
Developing empirical and physics-based predictive reliability modeling methods and tools for reliability risk assessments.
Developing new acceleration techniques, test methods and analytical tools to provide fast and effective feedback for process, product and test optimization on reliability issues Influencing design, process, product, test and/or system solutions in order to enable aggressive scaling of Intel's NVM technologies and exploration of novel memory cells.
Developing the appropriate process- and product-qualification stress methods and criteria.
You may be expected to lead small cross-functional and cross-company groups of engineers on multi-disciplinary technical projects to solve complex reliability issues- such as, during technology development and ramp to high-volume manufacturing. You may also be expected to supervise a small team of engineers and/or technicians.
You must possess the below minimum qualifications to be initially considered for this position. Preferred qualifications are in addition to the minimum requirements and are considered a plus factor in identifying top candidates.
You must have a Ph.D. degree in Electrical Engineering, Computer Engineering, Materials Science, Physics or Information Systems.
Basic solid understanding of semiconductor device physics, materials science, probability and statistics, electrical circuits, semiconductor processing, and quantum physics
10+ years experience outside academia relevant to non-volatile memory technology development
Preferred qualifications: Prior Intel Intern or Scholarship recipient, Intel full-time experience.
Non-Volatile Solutions Memory Group: The Non-Volatile Memory Solutions Group is a worldwide organization that delivers NAND flash memory products for use in Solid State Drives (SSDs), portable memory storage devices, digital camera memory cards, and other devices. The group is responsible for NVM technology design and development, complete Solid State Drive (SSD) system hardware and firmware development, as well as wafer and SSD manufacturing.